型号:

FDS6681Z

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET P-CH 30V 20A SO-8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDS6681Z PDF
产品培训模块 High Voltage Switches for Power Processing
产品变化通告 Mold Compound Change 12/Dec/2007
产品目录绘图 Power MOSFET, 8-SOP, SO-8
标准包装 1
系列 PowerTrench®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 20A
开态Rds(最大)@ Id, Vgs @ 25° C 4.6 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 260nC @ 10V
输入电容 (Ciss) @ Vds 7540pF @ 15V
功率 - 最大 1W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 SO-8
包装 剪切带 (CT)
产品目录页面 1604 (CN2011-ZH PDF)
其它名称 FDS6681ZCT
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